2SK3666-2-TB-E Verðlagning (USD) [1080797stk lager]
- 1 pcs$0.03821
- 3,000 pcs$0.03802
- Hlutanúmer:
- 2SK3666-2-TB-E
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- JFET NCH 30V 200MW 3CP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, Transistors - JFETs, Transistors - IGBTs - Single, Kerfisstjóratæki, Thyristors - TRIACs and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor 2SK3666-2-TB-E electronic components. 2SK3666-2-TB-E can be shipped within 24 hours after order. If you have any demands for 2SK3666-2-TB-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK3666-2-TB-E Vörueiginleikar
Hlutanúmer :
2SK3666-2-TB-E
Framleiðandi :
ON Semiconductor
Lýsing :
JFET NCH 30V 200MW 3CP
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Spenna - sundurliðun (V (BR) GSS) :
-
Afrennsli að uppspennu (Vdss) :
30V
Núverandi - Drain (Idss) @ Vds (Vgs = 0) :
600µA @ 10V
Núverandi frárennsli (auðkenni) - Max :
10mA
Spenna - Cutoff (VGS slökkt) @ kt :
180mV @ 1µA
Inntaksrýmd (Ciss) (Max) @ Vds :
4pF @ 10V
Resistance - RDS (On) :
200 Ohms
Afl - Max :
200mW
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
Birgir tæki pakki :
3-CP
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