NSVB123JPDXV6T1G Verðlagning (USD) [2047stk lager]
- 8,000 pcs$0.04248
- Hlutanúmer:
- NSVB123JPDXV6T1G
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- TRANS PREBIAS NPN/PNP SOT563.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - IGBTs - mát, Díóða - Bríta leiðréttingar, Díóða - Zener - Stakur, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - sérstök tilgangur, Díóða - RF and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor NSVB123JPDXV6T1G electronic components. NSVB123JPDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSVB123JPDXV6T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSVB123JPDXV6T1G Vörueiginleikar
Hlutanúmer :
NSVB123JPDXV6T1G
Framleiðandi :
ON Semiconductor
Lýsing :
TRANS PREBIAS NPN/PNP SOT563
Röð :
-
Hluti staða :
Obsolete
Transistor Type :
1 NPN, 1 PNP - Pre-Biased (Dual)
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
2.2 kOhms
Viðnám - Emitter Base (R2) :
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Núverandi - Úrskurður safnara (Max) :
500nA
Tíðni - umskipti :
-
Afl - Max :
500mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-563, SOT-666
Birgir tæki pakki :
SOT-563
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