IPT111N20NFDATMA1 Verðlagning (USD) [22406stk lager]
- 1 pcs$1.83937
- 2,000 pcs$1.68749
- Hlutanúmer:
- IPT111N20NFDATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 200V 96A HSOF-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki, Transistors - IGBTs - Single, Thyristors - TRIACs, Díóða - RF and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPT111N20NFDATMA1 electronic components. IPT111N20NFDATMA1 can be shipped within 24 hours after order. If you have any demands for IPT111N20NFDATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT111N20NFDATMA1 Vörueiginleikar
Hlutanúmer :
IPT111N20NFDATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 200V 96A HSOF-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
96A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
11.1 mOhm @ 96A, 10V
Vgs (th) (Max) @ kt :
4V @ 267µA
Hliðargjald (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
7000pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
375W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-HSOF-8-1
Pakki / mál :
8-PowerSFN
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