Vishay Semiconductor Diodes Division - VS-EMF050J60U

KEY Part #: K6533633

[769stk lager]


    Hlutanúmer:
    VS-EMF050J60U
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    IGBT 600V 88A 338W EMIPAK2.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Kerfisstjóratæki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast and Díóða - Bríta leiðréttingar ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division VS-EMF050J60U electronic components. VS-EMF050J60U can be shipped within 24 hours after order. If you have any demands for VS-EMF050J60U, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-EMF050J60U Vörueiginleikar

    Hlutanúmer : VS-EMF050J60U
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : IGBT 600V 88A 338W EMIPAK2
    Röð : -
    Hluti staða : Obsolete
    IGBT gerð : -
    Stillingar : Three Level Inverter
    Spenna - sundurliðun útsendara (hámark) : 600V
    Núverandi - Safnari (Ic) (Max) : 88A
    Afl - Max : 338W
    Vce (on) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
    Núverandi - Úrskurður safnara (Max) : 100µA
    Inntaksrýmd (Cies) @ Vce : 9.5nF @ 30V
    Inntak : Standard
    NTC Thermistor : No
    Vinnuhitastig : 150°C (TJ)
    Festingargerð : Chassis Mount
    Pakki / mál : EMIPAK2
    Birgir tæki pakki : EMIPAK2

    Þú gætir líka haft áhuga á
    • VS-GT175DA120U

      Vishay Semiconductor Diodes Division

      IGBT 1200V 288A 1087W SOT-227.

    • VS-CPV363M4KPBF

      Vishay Semiconductor Diodes Division

      MOD IGBT 3PHASE INV 600V SIP.

    • VS-GT100NA120UX

      Vishay Semiconductor Diodes Division

      IGBT 1200V 134A 463W SOT-227.

    • VS-GT100LA120UX

      Vishay Semiconductor Diodes Division

      IGBT 1200V 134A 463W SOT-227.

    • VS-GT100DA60U

      Vishay Semiconductor Diodes Division

      IGBT 600V 184A 577W SOT-227.

    • VS-GT100DA120U

      Vishay Semiconductor Diodes Division

      IGBT 1200V 258A 893W SOT-227.