DMN2014LHAB-7 Verðlagning (USD) [437547stk lager]
- 1 pcs$0.08453
- 3,000 pcs$0.06662
- Hlutanúmer:
- DMN2014LHAB-7
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 9A 6-UDFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN2014LHAB-7 electronic components. DMN2014LHAB-7 can be shipped within 24 hours after order. If you have any demands for DMN2014LHAB-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2014LHAB-7 Vörueiginleikar
Hlutanúmer :
DMN2014LHAB-7
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET 2N-CH 20V 9A 6-UDFN
Röð :
-
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A
Rds On (Max) @ Id, Vgs :
13 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ kt :
1.1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
16nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
1550pF @ 10V
Afl - Max :
800mW
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-UFDFN Exposed Pad
Birgir tæki pakki :
U-DFN2030-6 (Type B)
Nýjustu fréttir
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