DF23MR12W1M1B11BOMA1 Verðlagning (USD) [998stk lager]
- 1 pcs$46.57521
- Hlutanúmer:
- DF23MR12W1M1B11BOMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET MODULE 1200V 25A.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Díóða - Bríta leiðréttingar, Díóða - leiðréttingar - fylki, Thyristors - TRIACs, Díóða - leiðréttingar - stakir and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies DF23MR12W1M1B11BOMA1 electronic components. DF23MR12W1M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for DF23MR12W1M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF23MR12W1M1B11BOMA1 Vörueiginleikar
Hlutanúmer :
DF23MR12W1M1B11BOMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET MODULE 1200V 25A
Röð :
CoolSiC™
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Silicon Carbide (SiC)
Afrennsli að uppspennu (Vdss) :
1200V (1.2kV)
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
25A
Rds On (Max) @ Id, Vgs :
45 mOhm @ 25A, 15V
Vgs (th) (Max) @ kt :
5.5V @ 10mA
Hliðargjald (Qg) (Max) @ Vgs :
620nC @ 15V
Inntaksrýmd (Ciss) (Max) @ Vds :
2000pF @ 800V
Afl - Max :
20mW
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Chassis Mount
Pakki / mál :
Module
Birgir tæki pakki :
Module
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