IPN80R1K2P7ATMA1 Verðlagning (USD) [183749stk lager]
- 1 pcs$0.20129
- Hlutanúmer:
- IPN80R1K2P7ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- COOLMOS P7 800V SOT-223.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, Díóða - Bríta leiðréttingar, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - JFETs and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPN80R1K2P7ATMA1 electronic components. IPN80R1K2P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R1K2P7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN80R1K2P7ATMA1 Vörueiginleikar
Hlutanúmer :
IPN80R1K2P7ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
COOLMOS P7 800V SOT-223
Röð :
CoolMOS™ P7
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.2 Ohm @ 1.7A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 80µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
300pF @ 500V
FET lögun :
-
Dreifing orku (Max) :
6.8W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-SOT223
Pakki / mál :
TO-261-3
Nýjustu fréttir
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