[3848stk lager]
- Hlutanúmer:
- SI7530DP-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P-CH 60V 3A PPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Single, Díóða - leiðréttingar - fylki, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI7530DP-T1-E3 electronic components. SI7530DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7530DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7530DP-T1-E3 Vörueiginleikar
Hlutanúmer :
SI7530DP-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P-CH 60V 3A PPAK SO-8
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3A, 3.2A
Rds On (Max) @ Id, Vgs :
75 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
1.4W, 1.5W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SO-8 Dual
Birgir tæki pakki :
PowerPAK® SO-8 Dual
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