[12496stk lager]
- Hlutanúmer:
- PH5330E,115
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 30V 80A LFPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Díóða - Zener - Fylki, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PH5330E,115 electronic components. PH5330E,115 can be shipped within 24 hours after order. If you have any demands for PH5330E,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PH5330E,115 Vörueiginleikar
Hlutanúmer :
PH5330E,115
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 30V 80A LFPAK
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
80A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.7 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
21nC @ 5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2010pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
62.5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
LFPAK56, Power-SO8
Pakki / mál :
SC-100, SOT-669
Nýjustu fréttir
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