[13644stk lager]
- Hlutanúmer:
- IRF5803D2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET P-CH 40V 3.4A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Zener - Stakur, Kerfisstjóratæki, Díóða - breytileg getu, Transistors - JFETs and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF5803D2PBF electronic components. IRF5803D2PBF can be shipped within 24 hours after order. If you have any demands for IRF5803D2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5803D2PBF Vörueiginleikar
Hlutanúmer :
IRF5803D2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET P-CH 40V 3.4A 8-SOIC
Röð :
FETKY™
Hluti staða :
Obsolete
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.4A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
112 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1110pF @ 25V
FET lögun :
Schottky Diode (Isolated)
Dreifing orku (Max) :
2W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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