[3498stk lager]
- Hlutanúmer:
- PHD34NQ10T,118
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 100V 35A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PHD34NQ10T,118 electronic components. PHD34NQ10T,118 can be shipped within 24 hours after order. If you have any demands for PHD34NQ10T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD34NQ10T,118 Vörueiginleikar
Hlutanúmer :
PHD34NQ10T,118
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 100V 35A DPAK
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
35A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 17A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1704pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
136W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DPAK
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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