IPD80R1K4P7ATMA1 Verðlagning (USD) [190210stk lager]
- 1 pcs$0.19446
- 2,500 pcs$0.18546
- Hlutanúmer:
- IPD80R1K4P7ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 800V 4A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Single, Díóða - leiðréttingar - stakir, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - fylki, Díóða - Bríta leiðréttingar and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD80R1K4P7ATMA1 electronic components. IPD80R1K4P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R1K4P7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R1K4P7ATMA1 Vörueiginleikar
Hlutanúmer :
IPD80R1K4P7ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 800V 4A DPAK
Röð :
CoolMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 700µA
Hliðargjald (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
250pF @ 500V
FET lögun :
Super Junction
Dreifing orku (Max) :
32W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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