Hlutanúmer :
APTM100A23SCTG
Framleiðandi :
Microsemi Corporation
Lýsing :
MOSFET 2N-CH 1000V 36A SP4
FET gerð :
2 N-Channel (Half Bridge)
FET lögun :
Silicon Carbide (SiC)
Afrennsli að uppspennu (Vdss) :
1000V (1kV)
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
36A
Rds On (Max) @ Id, Vgs :
270 mOhm @ 18A, 10V
Vgs (th) (Max) @ kt :
5V @ 5mA
Hliðargjald (Qg) (Max) @ Vgs :
308nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
8700pF @ 25V
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Chassis Mount