Lýsing :
GAN TRANS 2N-CH 80V BUMPED DIE
FET gerð :
2 N-Channel (Half Bridge)
FET lögun :
GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
23A
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ kt :
2.5V @ 7mA
Hliðargjald (Qg) (Max) @ Vgs :
6.5nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
760pF @ 40V
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount