[4004stk lager]
- Hlutanúmer:
- IRFHM792TR2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 100V 2.3A 8PQFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur, Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFHM792TR2PBF electronic components. IRFHM792TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM792TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM792TR2PBF Vörueiginleikar
Hlutanúmer :
IRFHM792TR2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 100V 2.3A 8PQFN
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.3A
Rds On (Max) @ Id, Vgs :
195 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ kt :
4V @ 10µA
Hliðargjald (Qg) (Max) @ Vgs :
6.3nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
251pF @ 25V
Afl - Max :
2.3W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerVDFN
Birgir tæki pakki :
8-PQFN (3.3x3.3), Power33
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