Infineon Technologies - BUZ30AH3045AATMA1

KEY Part #: K6418921

BUZ30AH3045AATMA1 Verðlagning (USD) [82979stk lager]

  • 1 pcs$0.47121
  • 1,000 pcs$0.43233

Hlutanúmer:
BUZ30AH3045AATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 200V 21A TO-263.
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Díóða - Zener - Stakur, Thyristors - TRIACs, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUZ30AH3045AATMA1 Vörueiginleikar

Hlutanúmer : BUZ30AH3045AATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 200V 21A TO-263
Röð : SIPMOS®
Hluti staða : Not For New Designs
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 21A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ kt : 4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : -
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1900pF @ 25V
FET lögun : -
Dreifing orku (Max) : 125W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263AB)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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