BSZ013NE2LS5IATMA1 Verðlagning (USD) [122172stk lager]
- 1 pcs$0.30275
- 5,000 pcs$0.29217
- Hlutanúmer:
- BSZ013NE2LS5IATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 32A 8SON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Díóða - breytileg getu, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - fylki, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSZ013NE2LS5IATMA1 electronic components. BSZ013NE2LS5IATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ013NE2LS5IATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ013NE2LS5IATMA1 Vörueiginleikar
Hlutanúmer :
BSZ013NE2LS5IATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 32A 8SON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
32A (Ta), 40A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (hámark) :
±16V
Inntaksrýmd (Ciss) (Max) @ Vds :
3400pF @ 12V
FET lögun :
-
Dreifing orku (Max) :
2.1W (Ta), 69W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TSDSON-8-FL
Pakki / mál :
8-PowerTDFN
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