IPN60R3K4CEATMA1 Verðlagning (USD) [514616stk lager]
- 1 pcs$0.07187
- 3,000 pcs$0.06317
- Hlutanúmer:
- IPN60R3K4CEATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET NCH 600V 2.6A SOT223.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, forspeglast, Kerfisstjóratæki, Transistors - IGBTs - mát, Díóða - Zener - Stakur, Díóða - Zener - Fylki, Transistors - JFETs and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPN60R3K4CEATMA1 electronic components. IPN60R3K4CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R3K4CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R3K4CEATMA1 Vörueiginleikar
Hlutanúmer :
IPN60R3K4CEATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET NCH 600V 2.6A SOT223
Röð :
CoolMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
3.5V @ 40µA
Hliðargjald (Qg) (Max) @ Vgs :
4.6nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
93pF @ 100V
FET lögun :
Super Junction
Dreifing orku (Max) :
5W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-SOT223
Pakki / mál :
SOT-223-3
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