[12253stk lager]
- Hlutanúmer:
- STW11NB80
- Framleiðandi:
- STMicroelectronics
- Nákvæm lýsing:
- MOSFET N-CH 800V 11A TO-247.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - IGBTs - mát, Díóða - Zener - Stakur, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - Arrays, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in STMicroelectronics STW11NB80 electronic components. STW11NB80 can be shipped within 24 hours after order. If you have any demands for STW11NB80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW11NB80 Vörueiginleikar
Hlutanúmer :
STW11NB80
Framleiðandi :
STMicroelectronics
Lýsing :
MOSFET N-CH 800V 11A TO-247
Röð :
PowerMESH™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
800 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2900pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
190W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-247-3
Pakki / mál :
TO-247-3
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