[1517stk lager]
- Hlutanúmer:
- IRFH8337TR2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 9.7A 5X6 PQFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki, Díóða - RF, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - RF and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFH8337TR2PBF electronic components. IRFH8337TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH8337TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8337TR2PBF Vörueiginleikar
Hlutanúmer :
IRFH8337TR2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 9.7A 5X6 PQFN
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Ta), 35A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12.8 mOhm @ 16.2A, 10V
Vgs (th) (Max) @ kt :
2.35V @ 25µA
Hliðargjald (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
790pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
3.2W (Ta), 27W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PQFN (5x6)
Pakki / mál :
8-PowerTDFN
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