[2154stk lager]
- Hlutanúmer:
- RJK2009DPM-00#T0
- Framleiðandi:
- Renesas Electronics America
- Nákvæm lýsing:
- MOSFET N-CH 200V 40A TO3PFM.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - RF, Díóða - RF, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Renesas Electronics America RJK2009DPM-00#T0 electronic components. RJK2009DPM-00#T0 can be shipped within 24 hours after order. If you have any demands for RJK2009DPM-00#T0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK2009DPM-00#T0 Vörueiginleikar
Hlutanúmer :
RJK2009DPM-00#T0
Framleiðandi :
Renesas Electronics America
Lýsing :
MOSFET N-CH 200V 40A TO3PFM
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
40A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
36 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
-
Hliðargjald (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2900pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
60W (Tc)
Vinnuhitastig :
-
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-3PFM
Pakki / mál :
TO-3PFM, SC-93-3
Nýjustu fréttir
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