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- Hlutanúmer:
- SIB412DK-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 9A SC75-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Díóða - Zener - Stakur, Thyristors - DIACs, SIDACs, Díóða - breytileg getu, Díóða - leiðréttingar - stakir, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Arrays and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIB412DK-T1-GE3 electronic components. SIB412DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB412DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB412DK-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIB412DK-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 9A SC75-6
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
34 mOhm @ 6.6A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
10.16nC @ 5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
535pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
2.4W (Ta), 13W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SC-75-6L Single
Pakki / mál :
PowerPAK® SC-75-6L
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