[13204stk lager]
- Hlutanúmer:
- IRLBD59N04ETRLP
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 40V 59A D2PAK-5.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCR, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - sérstök tilgangur and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRLBD59N04ETRLP electronic components. IRLBD59N04ETRLP can be shipped within 24 hours after order. If you have any demands for IRLBD59N04ETRLP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLBD59N04ETRLP Vörueiginleikar
Hlutanúmer :
IRLBD59N04ETRLP
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 40V 59A D2PAK-5
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
59A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 35A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
50nC @ 5V
Vgs (hámark) :
±10V
Inntaksrýmd (Ciss) (Max) @ Vds :
2190pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
130W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-263-5
Pakki / mál :
TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
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