IPD12CN10NGATMA1 Verðlagning (USD) [100763stk lager]
- 1 pcs$0.38805
- 2,500 pcs$0.33125
- Hlutanúmer:
- IPD12CN10NGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 67A TO252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - Single, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - fylki, Díóða - breytileg getu, Transistors - FETs, MOSFETs - Arrays and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD12CN10NGATMA1 electronic components. IPD12CN10NGATMA1 can be shipped within 24 hours after order. If you have any demands for IPD12CN10NGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD12CN10NGATMA1 Vörueiginleikar
Hlutanúmer :
IPD12CN10NGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 67A TO252-3
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
67A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
12.4 mOhm @ 67A, 10V
Vgs (th) (Max) @ kt :
4V @ 83µA
Hliðargjald (Qg) (Max) @ Vgs :
65nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4320pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
125W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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