[8622stk lager]
- Hlutanúmer:
- IPB80N06S209ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 55V 80A TO263-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Thyristors - TRIACs, Díóða - breytileg getu, Transistors - Forritanleg sameining, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - Single, Díóða - RF and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB80N06S209ATMA1 electronic components. IPB80N06S209ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80N06S209ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80N06S209ATMA1 Vörueiginleikar
Hlutanúmer :
IPB80N06S209ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 55V 80A TO263-3
Röð :
OptiMOS™
Hluti staða :
Discontinued at Digi-Key
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
55V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
80A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
4V @ 125µA
Hliðargjald (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2360pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
190W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-3-2
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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