[2680stk lager]
- Hlutanúmer:
- IPD60R650CEATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 600V TO-252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Thyristors - SCR, Transistors - FETs, MOSFETs - RF, Díóða - Zener - Fylki, Díóða - RF, Díóða - leiðréttingar - fylki, Transistors - JFETs and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD60R650CEATMA1 electronic components. IPD60R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD60R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD60R650CEATMA1 Vörueiginleikar
Hlutanúmer :
IPD60R650CEATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 600V TO-252-3
Röð :
CoolMOS™ CE
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 200µA
Hliðargjald (Qg) (Max) @ Vgs :
20.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
440pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
63W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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