IRF8010PBF Verðlagning (USD) [40660stk lager]
- 1 pcs$0.92400
- 10 pcs$0.83286
- 100 pcs$0.66929
- 500 pcs$0.52058
- 1,000 pcs$0.43133
- Hlutanúmer:
- IRF8010PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 80A TO-220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Kerfisstjóratæki, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - mát, Transistors - JFETs and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF8010PBF electronic components. IRF8010PBF can be shipped within 24 hours after order. If you have any demands for IRF8010PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8010PBF Vörueiginleikar
Hlutanúmer :
IRF8010PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 80A TO-220AB
Röð :
HEXFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
80A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
15 mOhm @ 45A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3830pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
260W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
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