SIHP6N80E-GE3 Verðlagning (USD) [34895stk lager]
- 1 pcs$1.18108
- Hlutanúmer:
- SIHP6N80E-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 800V TO-220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Arrays, Thyristors - SCR, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHP6N80E-GE3 electronic components. SIHP6N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP6N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHP6N80E-GE3 Vörueiginleikar
Hlutanúmer :
SIHP6N80E-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 800V TO-220AB
Röð :
E
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
940 mOhm @ 3A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
44nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
827pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
78W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
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