Hlutanúmer :
SISS08DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 25 V POWERPAK 1212
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
53.9A (Ta), 195.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.23 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (hámark) :
+20V, -16V
Inntaksrýmd (Ciss) (Max) @ Vds :
3670pF @ 12.5V
Dreifing orku (Max) :
5W (Ta), 65.7W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8S
Pakki / mál :
PowerPAK® 1212-8S