SIS184DN-T1-GE3 Verðlagning (USD) [134082stk lager]
- 1 pcs$0.27586
- Hlutanúmer:
- SIS184DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 60V POWERPAK 1212-.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - fylki, Thyristors - TRIACs, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - RF and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIS184DN-T1-GE3 electronic components. SIS184DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS184DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS184DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIS184DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 60V POWERPAK 1212-
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
17.4A (Ta), 65.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
5.8 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
3.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1490pF @ 30V
FET lögun :
-
Dreifing orku (Max) :
3.7W (Ta), 52W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8S
Pakki / mál :
PowerPAK® 1212-8S
Nýjustu fréttir
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