ON Semiconductor - FQB13N10LTM

KEY Part #: K6413600

[13044stk lager]


    Hlutanúmer:
    FQB13N10LTM
    Framleiðandi:
    ON Semiconductor
    Nákvæm lýsing:
    MOSFET N-CH 100V 12.8A D2PAK.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - JFETs, Díóða - breytileg getu, Díóða - Bríta leiðréttingar, Smára - tvíhverfa (BJT) - fylki, Transistors - IGBTs - Single, Transistors - Forritanleg sameining and Thyristors - SCR ...
    Samkeppnisforskot:
    We specialize in ON Semiconductor FQB13N10LTM electronic components. FQB13N10LTM can be shipped within 24 hours after order. If you have any demands for FQB13N10LTM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQB13N10LTM Vörueiginleikar

    Hlutanúmer : FQB13N10LTM
    Framleiðandi : ON Semiconductor
    Lýsing : MOSFET N-CH 100V 12.8A D2PAK
    Röð : QFET®
    Hluti staða : Obsolete
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 100V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 12.8A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 5V, 10V
    Rds On (Max) @ Id, Vgs : 180 mOhm @ 6.4A, 10V
    Vgs (th) (Max) @ kt : 2V @ 250µA
    Hliðargjald (Qg) (Max) @ Vgs : 12nC @ 5V
    Vgs (hámark) : ±20V
    Inntaksrýmd (Ciss) (Max) @ Vds : 520pF @ 25V
    FET lögun : -
    Dreifing orku (Max) : 3.75W (Ta), 65W (Tc)
    Vinnuhitastig : -55°C ~ 175°C (TJ)
    Festingargerð : Surface Mount
    Birgir tæki pakki : D²PAK (TO-263AB)
    Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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