SIA430DJT-T1-GE3 Verðlagning (USD) [459022stk lager]
- 1 pcs$0.08058
- Hlutanúmer:
- SIA430DJT-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 12A SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Díóða - RF, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - mát, Díóða - Zener - Fylki and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIA430DJT-T1-GE3 electronic components. SIA430DJT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA430DJT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA430DJT-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIA430DJT-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 12A SC70-6
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 7A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
800pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
19.2W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SC-70-6 Single
Pakki / mál :
PowerPAK® SC-70-6
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