SIZF916DT-T1-GE3 Verðlagning (USD) [120687stk lager]
- 1 pcs$0.30647
- Hlutanúmer:
- SIZF916DT-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH DUAL 30V.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Díóða - leiðréttingar - fylki, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - mát, Díóða - leiðréttingar - stakir and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIZF916DT-T1-GE3 electronic components. SIZF916DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF916DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF916DT-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIZF916DT-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH DUAL 30V
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs :
4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 250µA, 2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
22nC @ 10V, 95nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1060pF @ 15V, 4320pF @ 15V
Afl - Max :
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerWDFN
Birgir tæki pakki :
8-PowerPair® (6x5)
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