BSC123N08NS3GATMA1 Verðlagning (USD) [155515stk lager]
- 1 pcs$0.23784
- 5,000 pcs$0.16144
- Hlutanúmer:
- BSC123N08NS3GATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 80V 55A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - mát, Díóða - RF, Transistors - IGBTs - Arrays and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC123N08NS3GATMA1 electronic components. BSC123N08NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC123N08NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC123N08NS3GATMA1 Vörueiginleikar
Hlutanúmer :
BSC123N08NS3GATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 80V 55A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11A (Ta), 55A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
12.3 mOhm @ 33A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 33µA
Hliðargjald (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1870pF @ 40V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 66W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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