[12753stk lager]
- Hlutanúmer:
- IRF7464TR
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 200V 1.2A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Díóða - Zener - Stakur, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF7464TR electronic components. IRF7464TR can be shipped within 24 hours after order. If you have any demands for IRF7464TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7464TR Vörueiginleikar
Hlutanúmer :
IRF7464TR
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 200V 1.2A 8-SOIC
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.2A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
730 mOhm @ 720mA, 10V
Vgs (th) (Max) @ kt :
5.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
280pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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