SI4931DY-T1-E3 Verðlagning (USD) [195156stk lager]
- 1 pcs$0.18953
- 2,500 pcs$0.16019
- Hlutanúmer:
- SI4931DY-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2P-CH 12V 6.7A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Díóða - RF and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4931DY-T1-E3 electronic components. SI4931DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4931DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4931DY-T1-E3 Vörueiginleikar
Hlutanúmer :
SI4931DY-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2P-CH 12V 6.7A 8-SOIC
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 P-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6.7A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 8.9A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 350µA
Hliðargjald (Qg) (Max) @ Vgs :
52nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
1.1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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