SQM200N04-1M8_GE3 Verðlagning (USD) [56679stk lager]
- 1 pcs$0.68986
- Hlutanúmer:
- SQM200N04-1M8_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 40V 200A TO263-7.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - RF, Díóða - RF, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Single, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQM200N04-1M8_GE3 electronic components. SQM200N04-1M8_GE3 can be shipped within 24 hours after order. If you have any demands for SQM200N04-1M8_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM200N04-1M8_GE3 Vörueiginleikar
Hlutanúmer :
SQM200N04-1M8_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 40V 200A TO263-7
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
200A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
310nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
17350pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
375W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-263-7
Pakki / mál :
TO-263-7, D²Pak (6 Leads + Tab)
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