[12351stk lager]
- Hlutanúmer:
- STP10NM65N
- Framleiðandi:
- STMicroelectronics
- Nákvæm lýsing:
- MOSFET N-CH 650V 9A TO-220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Single and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in STMicroelectronics STP10NM65N electronic components. STP10NM65N can be shipped within 24 hours after order. If you have any demands for STP10NM65N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP10NM65N Vörueiginleikar
Hlutanúmer :
STP10NM65N
Framleiðandi :
STMicroelectronics
Lýsing :
MOSFET N-CH 650V 9A TO-220
Röð :
MDmesh™ II
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
480 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (hámark) :
±25V
Inntaksrýmd (Ciss) (Max) @ Vds :
850pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
90W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
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