[174stk lager]
- Hlutanúmer:
- SPB10N10 G
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 10.3A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Single, Thyristors - DIACs, SIDACs and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies SPB10N10 G electronic components. SPB10N10 G can be shipped within 24 hours after order. If you have any demands for SPB10N10 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB10N10 G Vörueiginleikar
Hlutanúmer :
SPB10N10 G
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 10.3A D2PAK
Röð :
SIPMOS®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ kt :
4V @ 21µA
Hliðargjald (Qg) (Max) @ Vgs :
19.4nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
426pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
50W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-3-2
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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