Infineon Technologies - IPD80R2K8CEBTMA1

KEY Part #: K6402748

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    Hlutanúmer:
    IPD80R2K8CEBTMA1
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 800V 1.9A TO252-3.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
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    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining, Díóða - RF, Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur and Díóða - leiðréttingar - stakir ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies IPD80R2K8CEBTMA1 electronic components. IPD80R2K8CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R2K8CEBTMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPD80R2K8CEBTMA1 Vörueiginleikar

    Hlutanúmer : IPD80R2K8CEBTMA1
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 800V 1.9A TO252-3
    Röð : CoolMOS™
    Hluti staða : Discontinued at Digi-Key
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 800V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 1.9A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 2.8 Ohm @ 1.1A, 10V
    Vgs (th) (Max) @ kt : 3.9V @ 120µA
    Hliðargjald (Qg) (Max) @ Vgs : 12nC @ 10V
    Vgs (hámark) : ±20V
    Inntaksrýmd (Ciss) (Max) @ Vds : 290pF @ 100V
    FET lögun : -
    Dreifing orku (Max) : 42W (Tc)
    Vinnuhitastig : -55°C ~ 150°C (TJ)
    Festingargerð : Surface Mount
    Birgir tæki pakki : TO-252-3
    Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

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