[8348stk lager]
- Hlutanúmer:
- PMF3800SN,115
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 60V 260MA SOT323.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - RF, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - mát, Thyristors - SCR and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PMF3800SN,115 electronic components. PMF3800SN,115 can be shipped within 24 hours after order. If you have any demands for PMF3800SN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMF3800SN,115 Vörueiginleikar
Hlutanúmer :
PMF3800SN,115
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 60V 260MA SOT323
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
260mA (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
3.3V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
0.85nC @ 10V
Vgs (hámark) :
±15V
Inntaksrýmd (Ciss) (Max) @ Vds :
40pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
560mW (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-323-3
Pakki / mál :
SC-70, SOT-323
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