[9435stk lager]
- Hlutanúmer:
- GT60N321(Q)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- IGBT 1000V 60A 170W TO3P LH.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Thyristors - DIACs, SIDACs, Transistors - Forritanleg sameining, Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage GT60N321(Q) electronic components. GT60N321(Q) can be shipped within 24 hours after order. If you have any demands for GT60N321(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT60N321(Q) Vörueiginleikar
Hlutanúmer :
GT60N321(Q)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
IGBT 1000V 60A 170W TO3P LH
Röð :
-
Hluti staða :
Obsolete
IGBT gerð :
-
Spenna - sundurliðun útsendara (hámark) :
1000V
Núverandi - Safnari (Ic) (Max) :
60A
Núverandi - Safnari púlsaður (Icm) :
120A
Vce (on) (Max) @ Vge, Ic :
2.8V @ 15V, 60A
Afl - Max :
170W
Skiptir um orku :
-
Gerð innsláttar :
Standard
Hliðargjald :
-
Td (kveikt / slökkt) @ 25 ° C :
330ns/700ns
Próf ástand :
-
Afturheimtur bata (trr) :
2.5µs
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Pakki / mál :
TO-3PL
Birgir tæki pakki :
TO-3P(LH)
Nýjustu fréttir
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