SIR624DP-T1-GE3 Verðlagning (USD) [164336stk lager]
- 1 pcs$0.22507
- 3,000 pcs$0.21135
- Hlutanúmer:
- SIR624DP-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 200V 18.6A SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - RF, Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - TRIACs and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIR624DP-T1-GE3 electronic components. SIR624DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR624DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIR624DP-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIR624DP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 200V 18.6A SO-8
Röð :
ThunderFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
18.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
23nC @ 7.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1110pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
52W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
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