[8779stk lager]
- Hlutanúmer:
- GP1M003A080PH
- Framleiðandi:
- Global Power Technologies Group
- Nákvæm lýsing:
- MOSFET N-CH 800V 3A IPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Transistors - IGBTs - Arrays, Transistors - sérstök tilgangur, Transistors - JFETs, Díóða - breytileg getu, Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - RF and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Global Power Technologies Group GP1M003A080PH electronic components. GP1M003A080PH can be shipped within 24 hours after order. If you have any demands for GP1M003A080PH, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M003A080PH Vörueiginleikar
Hlutanúmer :
GP1M003A080PH
Framleiðandi :
Global Power Technologies Group
Lýsing :
MOSFET N-CH 800V 3A IPAK
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.2 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
696pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
94W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I-PAK
Pakki / mál :
TO-251-3 Short Leads, IPak, TO-251AA
Nýjustu fréttir
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