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- Hlutanúmer:
- IXTQ200N085T
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 85V 200A TO-3P.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Thyristors - SCRs - mát, Thyristors - SCR, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Díóða - leiðréttingar - fylki, Díóða - Zener - Fylki and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in IXYS IXTQ200N085T electronic components. IXTQ200N085T can be shipped within 24 hours after order. If you have any demands for IXTQ200N085T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTQ200N085T Vörueiginleikar
Hlutanúmer :
IXTQ200N085T
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 85V 200A TO-3P
Röð :
TrenchMV™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
85V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
200A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5 mOhm @ 25A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
7600pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
480W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-3P
Pakki / mál :
TO-3P-3, SC-65-3
Nýjustu fréttir
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