ON Semiconductor - NSBA123TDP6T5G

KEY Part #: K6529309

NSBA123TDP6T5G Verðlagning (USD) [957720stk lager]

  • 1 pcs$0.03881
  • 8,000 pcs$0.03862

Hlutanúmer:
NSBA123TDP6T5G
Framleiðandi:
ON Semiconductor
Nákvæm lýsing:
TRANS 2PNP PREBIAS 0.408W SOT963.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - IGBTs - mát, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Smára - tvíhverfa (BJT) - fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
Samkeppnisforskot:
We specialize in ON Semiconductor NSBA123TDP6T5G electronic components. NSBA123TDP6T5G can be shipped within 24 hours after order. If you have any demands for NSBA123TDP6T5G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSBA123TDP6T5G Vörueiginleikar

Hlutanúmer : NSBA123TDP6T5G
Framleiðandi : ON Semiconductor
Lýsing : TRANS 2PNP PREBIAS 0.408W SOT963
Röð : -
Hluti staða : Active
Transistor Type : 2 PNP - Pre-Biased (Dual)
Núverandi - Safnari (Ic) (Max) : 100mA
Spenna - sundurliðun útsendara (hámark) : 50V
Viðnám - stöð (R1) : 2.2 kOhms
Viðnám - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Núverandi - Úrskurður safnara (Max) : 500nA
Tíðni - umskipti : -
Afl - Max : 408mW
Festingargerð : Surface Mount
Pakki / mál : SOT-963
Birgir tæki pakki : SOT-963

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