SIZ322DT-T1-GE3 Verðlagning (USD) [252514stk lager]
- 1 pcs$0.14648
- Hlutanúmer:
- SIZ322DT-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2 N-CH 25V 30A 8-POWER33.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Díóða - Bríta leiðréttingar, Thyristors - TRIACs, Díóða - leiðréttingar - stakir, Transistors - sérstök tilgangur, Thyristors - SCR, Díóða - breytileg getu and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIZ322DT-T1-GE3 electronic components. SIZ322DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ322DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ322DT-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIZ322DT-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2 N-CH 25V 30A 8-POWER33
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
30A (Tc)
Rds On (Max) @ Id, Vgs :
6.35 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
20.1nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
950pF @ 12.5V
Afl - Max :
16.7W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerWDFN
Birgir tæki pakki :
8-Power33 (3x3)
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