GeneSiC Semiconductor - GA10JT12-263

KEY Part #: K6399113

GA10JT12-263 Verðlagning (USD) [4640stk lager]

  • 1 pcs$10.16943
  • 10 pcs$9.24469
  • 25 pcs$8.55122
  • 100 pcs$7.47449
  • 250 pcs$6.81498

Hlutanúmer:
GA10JT12-263
Framleiðandi:
GeneSiC Semiconductor
Nákvæm lýsing:
TRANS SJT 1200V 25A.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCRs - mát, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - fylki and Transistors - FETs, MOSFETs - Arrays ...
Samkeppnisforskot:
We specialize in GeneSiC Semiconductor GA10JT12-263 electronic components. GA10JT12-263 can be shipped within 24 hours after order. If you have any demands for GA10JT12-263, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA10JT12-263 Vörueiginleikar

Hlutanúmer : GA10JT12-263
Framleiðandi : GeneSiC Semiconductor
Lýsing : TRANS SJT 1200V 25A
Röð : -
Hluti staða : Active
FET gerð : -
Tækni : SiC (Silicon Carbide Junction Transistor)
Afrennsli að uppspennu (Vdss) : 1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 25A (Tc)
Drifspenna (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 120 mOhm @ 10A
Vgs (th) (Max) @ kt : -
Hliðargjald (Qg) (Max) @ Vgs : -
Vgs (hámark) : -
Inntaksrýmd (Ciss) (Max) @ Vds : 1403pF @ 800V
FET lögun : -
Dreifing orku (Max) : 170W (Tc)
Vinnuhitastig : 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : -
Pakki / mál : -
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