Toshiba Semiconductor and Storage - TK62J60W,S1VQ

KEY Part #: K6397982

TK62J60W,S1VQ Verðlagning (USD) [6297stk lager]

  • 1 pcs$7.20104
  • 25 pcs$6.05363
  • 100 pcs$5.56274

Hlutanúmer:
TK62J60W,S1VQ
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
MOSFET N CH 600V 61.8A TO-3PN.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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We specialize in Toshiba Semiconductor and Storage TK62J60W,S1VQ electronic components. TK62J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK62J60W,S1VQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK62J60W,S1VQ Vörueiginleikar

Hlutanúmer : TK62J60W,S1VQ
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : MOSFET N CH 600V 61.8A TO-3PN
Röð : DTMOSIV
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 61.8A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 38 mOhm @ 30.9A, 10V
Vgs (th) (Max) @ kt : 3.7V @ 3.1mA
Hliðargjald (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 6500pF @ 300V
FET lögun : Super Junction
Dreifing orku (Max) : 400W (Tc)
Vinnuhitastig : 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-3P(N)
Pakki / mál : TO-3P-3, SC-65-3

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