IGT60R190D1SATMA1 Verðlagning (USD) [10659stk lager]
- 1 pcs$3.86600
- Hlutanúmer:
- IGT60R190D1SATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- IC GAN FET 600V 23A 8HSOF.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Díóða - leiðréttingar - fylki, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IGT60R190D1SATMA1 electronic components. IGT60R190D1SATMA1 can be shipped within 24 hours after order. If you have any demands for IGT60R190D1SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGT60R190D1SATMA1 Vörueiginleikar
Hlutanúmer :
IGT60R190D1SATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
IC GAN FET 600V 23A 8HSOF
Röð :
CoolGaN™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ kt :
1.6V @ 960µA
Hliðargjald (Qg) (Max) @ Vgs :
-
Vgs (hámark) :
-10V
Inntaksrýmd (Ciss) (Max) @ Vds :
157pF @ 400V
FET lögun :
-
Dreifing orku (Max) :
55.5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-HSOF-8-3
Pakki / mál :
8-PowerSFN
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